t4 - lds -0 164 , rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 1 of 7 2n6788 and 2n6790 available on commercial versions n- channel mosfet qualified per mil - prf - 19500/555 qualified levels : jan, jantx, and jantxv description th ese 2n6788 and 2n6790 device s are mili tary qualified up to a jantxv level for high - reliability applications. microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. to - 205af (formerly to - 39) package also available in : u- 18 lcc package (surface mount) 2n 6788u & 2n 6790u important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n6788 a nd 2n6790 number. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/555. ? rohs compliant versions available (commercial grade only) . applications / benefits ? high f requency o peration. ? lightweight package . ? esd rated to class 1a. maxi mum ratings @ t c = +25 c unless otherwise noted parameters / test conditions symbol value unit junction & storage temperature t j , t stg - 55 to +150 c thermal resistance junction - to - case (see figure 1 ) r ? jc 6.25 oc /w total power dissipation (1) p t 0.8 w drain to g ate v oltage 2n6788 2n6790 v dg 100 200 v drain C source voltage 2n6788 2n6790 v ds 100 200 v gate C source voltage v gs 20 v drain current , dc @ t c = +25 c (2) (see figure ?) 2n6788 2n6790 i d1 6.0 3.5 a drain current , dc @ t c = +100 c 2n6788 2n6790 i d2 3.5 2.25 a off -s tate current (3) 2n6788 2n6790 i dm 24 14 a (pk) source c urrent 2n6788 2n6790 i s 6.0 3.5 a notes : 1. derated l inearly by 0.16 w/c for t c > +25 c. 2. the following formula derives the maximum theoretical i d limit. i d is also limited by package and internal wires and may be limited due to pin diameter. 3 . i dm = 4 x i d1 ; i d1 as calculated in note 2. msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com downloaded from: http:///
t4 - lds -0 164 , rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 2 of 7 2n6788 and 2n6790 mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? term inals: tin/ l ead solder dip n ickel plate or rohs compliant pure tin plate (commercial grade only) . ? marking: part number, d ate c ode, m anufacturers id. ? weight: approximately 1.064 grams. ? see p ackage d imensions on last page. part nomenclature jan 2n67 88 (e3) reliability level jan =jan level j antx =jantx level jantxv=jantxv level blank = commercial jedec type number rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symbols & defi nitions symbol definition i d drain current . i f forward current . t c case temperature . v dd drain supply voltage . v ds drain to source voltage . v gs gate to source voltage . downloaded from: http:///
t4 - lds -0 164 , rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 3 of 7 2n6788 and 2n6790 electrical characteristics @ t a = +25 c, unless otherwise noted parameter s / test conditions symbol min. max. unit off charactertics drain - source breakdown voltage v gs = 0 v, i d = 1 ma 2n6788 2n6790 v (br)dss 100 200 v gate - source voltage (threshold) v ds v gs , i d = 0.25 ma v ds v gs , i d = 0.25 ma, t j = +125 c v ds v gs , i d = 0.25 ma, t j = - 55 c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125 c i gss1 i gss2 100 200 na parameters / test conditions symbol min. max. unit on character is tics drain current v gs = 0v, v ds = 8 0 v v gs = 0v, v ds = 160 v 2n6788 2n6790 i dss1 25 a drain current v gs = 0v, v ds = 8 0 v , t j = +125 c v gs = 0v, v ds = 160 v, t j = +125 c 2n6788 2n6790 i dss2 0.25 ma static drain - source on - state resist ance v gs = 10 v, i d = 3. 5 a pulsed v gs = 10 v, i d = 2.25 a pulsed 2n6788 2n6790 r ds(on)1 0.30 0.80 ? static drain - source on - state resistance v gs = 10 v, i d = 6.0 a pulsed v gs = 10 v, i d = 3.5 a pulsed 2n6788 2n6790 r ds(on)2 0.35 0.85 ? stati c drain - source on - state resistance t j = +125 c: v gs = 10 v, i d = 3. 5 a pulsed v gs = 10 v, i d = 2.25 a pulsed 2n6788 2n6790 r ds(on)3 0.54 1.50 ? diode forward voltage v gs = 0 v, i d = 6.0 a pulsed v gs = 0 v, i d = 3.5 a pulsed 2n6788 2n6790 v sd 1.8 1.5 v downloaded from: http:///
t4 - lds -0 164 , rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 4 of 7 2n6788 and 2n6790 electrical characteristics @ t a = +25 c, unless otherwise noted (continued) dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = 10 v, i d = 6.0 a, v ds = 50 v v gs = 10 v, i d = 3 .5 a, v ds = 10 0 v 2n6788 2n6790 q g(on) 18.0 14.3 nc gate to source charge v gs = 10 v, i d = 6.0 a, v ds = 50 v v gs = 10 v, i d = 3 .5 a, v ds = 10 0 v 2n6788 2n6790 q gs 4.0 3.0 nc gate to drain charge v gs = 10 v, i d = 6.0 a, v ds = 5 0 v v gs = 10 v, i d = 3 .5 a, v ds = 10 0 v 2n6788 2n6790 q gd 9.0 9.0 nc switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = 6 .0 a, v gs = 10 v, r g = 7.5 ? , v dd = 3 5 v i d = 3 .5 a, v gs = 10 v, r g = 7.5 ? , v dd = 7 4 v 2n6788 2n6790 t d(on) 40 ns rinse time i d = 6 .0 a, v gs = 10 v, r g = 7.5 ? , v dd = 3 5 v i d = 3 .5 a, v gs = 10 v, r g = 7.5 ? , v dd = 7 4 v 2n6788 2n6790 t r 70 50 ns turn - off delay time i d = 6 .0 a, v gs = 10 v, r g = 7.5 ? , v dd = 3 5 v i d = 3 .5 a, v gs = 10 v, r g = 7.5 ? , v dd = 7 4 v 2n6788 2n6790 t d(off) 40 50 ns fall time i d = 6 .0 a, v gs = 10 v, r g = 7.5 ? , v dd = 3 5 v i d = 3 .5 a, v gs = 10 v, r g = 7.5 ? , v dd = 7 4 v 2n6788 2n6790 t f 70 50 ns diode reverse recovery time di/dt = 100 a/s, v dd 50 v, i f = 6 .0 a di/dt = 100 a/s, v dd 50 v, i f = 3 .5 a 2n6788 2n6790 t rr 240 400 ns downloaded from: http:///
t4 - lds -0 164 , rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 5 of 7 2n6788 and 2n6790 graphs t 1 , rectangular pulse duration (seconds) figure 1 thermal impedance curves t c case temperature (c) t c case temperature (c) (2n6788) (2n6790) figure 2 maximum drain current vs. case temperature graph i d drain current (amperes) thermal response (z ? jc ) i d drain current (amperes) downloaded from: http:///
t4 - lds -0 164 , rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 6 of 7 2n6788 and 2n6790 graphs (continued) v ds , drain - to - source voltage (volts) maximum safe operating area (2n6788) v ds , drain - to - source voltage (volts) maximum safe operating area (2n6790) i d drain current (amperes) i d drain current (amperes) downloaded from: http:///
t4 - lds -0 164 , rev . 1 (1 2 1482 ) ?201 2 microsemi corporation page 7 of 7 2n6788 and 2n6790 package dimensions schematic circuit notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, tl shall be held for a minimum length of .011 inch (0.28 mm ). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7. dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrol led in l1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. in accordance with asme y14.5m, diameters are equivalent to x symbology. 12. lead 1 = source, lead 2 = gate, lead 3 = drain. ltr dimensions inch millimeters notes min max min max cd .305 .3 35 7.75 8.51 ch .160 .180 4.07 4.57 hd .335 .370 8.51 9.40 h .009 .041 0.23 1.04 j .028 .034 0.7 1 0.86 3 k .029 .045 0.74 1.14 3 , 4 ld .016 .021 0.41 0.53 7, 8 ll .500 .750 12.7 19.05 7, 8 , 12 ls .200 tp 5.08 tp 6 lu .016 .019 0.41 0.48 7, 8 l1 .050 1.27 7, 8 l2 .250 6.35 7, 8 p . 100 2.54 q .050 1.27 5 r .010 0.25 10 45 tp 45 tp 6 downloaded from: http:///
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